DocumentCode
3194124
Title
Comparative study of porous SOG films with different non-destructive instrumentation
Author
Baklanov, M.R. ; Kondoh, E. ; Lin, E.K. ; Gidley, D.W. ; Lee, H.-J. ; Mogilnikov, K.P. ; Sun, J.N.
Author_Institution
IMEC, Leuven, Belgium
fYear
2001
fDate
6-6 June 2001
Firstpage
189
Lastpage
191
Abstract
Porosity and pore size of siloxane-based porous spin-on-glass (SOG) thin films are comparatively studied with different non-destructive methods and also with reference to nitrogen porosimetry. The pore size and its spread are found to increase with increasing porosity, or with decreasing dielectric constant.
Keywords
dielectric thin films; nondestructive testing; organic compounds; permittivity; porous materials; dielectric constant; nitrogen porosimetry; nondestructive instrumentation; pore size; porosity; siloxane porous spin-on-glass thin film; Dielectric constant; Instruments; NIST; Physics; Semiconductor films; Spectroscopy; Spine; Thermal conductivity; Thermal stability; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location
Burlingame, CA, USA
Print_ISBN
0-7803-6678-6
Type
conf
DOI
10.1109/IITC.2001.930056
Filename
930056
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