High-resolution EDS analysis of ultra-thin TaSiN diffusion barriers for Cu metallization using microcalorimetry

Author

Geer, R.E. ; Wu, D. ; Wollman, D.A.

Author_Institution

Inst. for Mater., Albany, NY, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

192

Lastpage

194

Abstract

Microcalorimeter-based energy dispersive X-ray spectroscopy (EDS) has been used to analyze ultra-thin TaSiN films under development as ion diffusion barriers in sub-0.1 micrometer integrated circuit (IC) interconnects. The elimination of elemental peak overlaps provided by the improved energy resolution of the microcalorimeter X-ray detector is demonstrated for TaSiN films as thin as 3.5 nm. Also, variation of the electron beam (e-beam) energy is examined to reduce the X-ray generation volume relative to the TaSiN film thickness. This work demonstrates the utility of microcalorimeter-based EDS for compositional metrology of ultra-thin barrier layers for Cu metallization.

Keywords

X-ray chemical analysis; diffusion barriers; integrated circuit metallisation; silicon compounds; surface diffusion; tantalum compounds; 0.1 mum; 3.5 nm; Cu; Cu metallization; TaSiN; X-ray generation volume; elemental peak overlaps; energy resolution; high-resolution EDS analysis; integrated circuit interconnects; ion diffusion barriers; microcalorimeter X-ray detector; microcalorimetry; ultra-thin TaSiN diffusion barriers; Energy resolution; Integrated circuit interconnections; Metallization; Metrology; NIST; Probes; Semiconductor films; Spectroscopy; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930057

Filename

930057