Title :
New measurement technique of pore size distribution of porous low-k film
Author :
Kawamura, Shigeru ; Maekawa, Kaoru ; Ohta, Tomohiro ; Omote, Kazuhiko ; Suzuki, Ryoichi ; Ohdaira, Toshiyuki ; Tachibana, Mitsuhiro ; Suzuki, Kenji
Author_Institution :
Technol. Dev. Center, Tokyo Electron. Ltd., Japan
Abstract :
We developed a new simple X-ray scattering method for determining the pore size distribution in porous low-k film on silicon substrate without the destruction of the low-k film. We succeeded to observe the tungsten in porous MSQ (Methyl Silses Quioxane) film by TEM after the filling of tungsten into the pores by tungsten chemical vapor deposition (CVD). Furthermore, we compared this Small Angle X-ray Scattering (SAXS) and Gas Adsorption (GA) and Positron Annihilation Lifetime Spectroscopy (PALS).
Keywords :
X-ray scattering; adsorption; dielectric thin films; organic compounds; porous materials; positron annihilation; transmission electron microscopy; MSQ; TEM; W; chemical vapor deposition; gas adsorption; methyl silses quioxane; nondestructive measurement technique; pore size distribution; porous low-k dielectric film; positron annihilation lifetime spectroscopy; silicon substrate; small-angle X-ray scattering; tungsten filling; Chemical vapor deposition; Filling; Measurement techniques; Positrons; Semiconductor films; Silicon; Spectroscopy; Substrates; Tungsten; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930058
