DocumentCode
3194216
Title
Recorded low power dissipation of 0.14 mW/Gbps in 1060 nm VCSELs for “Green” optical interconnection
Author
Imai, Suguru ; Takaki, Keishi ; Shimizu, Hitoshi ; Kawakita, Yasumasa ; Takagi, Tomohiro ; Hiraiwa, Koji ; Shimizu, Hiroshi ; Iwai, Norihiro ; Tsukiji, Naoki ; Kasukawa, Akihiko
Author_Institution
Photonic Device Res. Center, Furukawa Electr. Co., Ltd., Ichihara, Japan
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
152
Lastpage
153
Abstract
Extremely low power dissipation of 0.14 mW/Gbps at 10 Gbps operation with as small as 75 mVp-p of modulation amplitude has been achieved in carefully designed InGaAs/GaAs-MQW 1060 nm VCSELs employed double intra-cavity structure.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical interconnections; optical modulation; quantum well lasers; surface emitting lasers; InGaAs-GaAs; VCSEL; bit rate 10 Gbit/s; double intracavity structure; green optical interconnection; modulation amplitude; power dissipation; wavelength 1060 nm; Bit error rate; Jitter; Modulation; Optical attenuators; Power dissipation; Resistance; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642705
Filename
5642705
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