Title :
Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications
Author :
Eisenbraun, Eric ; Van der Straten, Oscar ; Zhu, Yu ; Dovidenko, Katharine ; Kaloyeros, Alain
Author_Institution :
New York State Center for Adv. Thin Film Technol., Albany, NY, USA
Abstract :
A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced ´zero thickness´ copper barrier applications. This process, which is carried out at substrate temperatures below 450°C on commercial ALD reactor, employs TBTDET and NH 3 as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.
Keywords :
copper; diffusion barriers; integrated circuit interconnections; tantalum compounds; vacuum deposition; 450 C; Cu; TaN; copper interconnect; high aspect ratio structure; low-k dielectric substrate; metalorganic atomic layer deposition; microelectronics processing; tantalum nitride; zero thickness diffusion barrier; Atomic layer deposition; Chemical vapor deposition; Copper; Dielectric substrates; Inductors; Nitrogen; Robustness; Scanning electron microscopy; Semiconductor films; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930062
