Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

Author

Eisenbraun, Eric ; Van der Straten, Oscar ; Zhu, Yu ; Dovidenko, Katharine ; Kaloyeros, Alain

Author_Institution

New York State Center for Adv. Thin Film Technol., Albany, NY, USA

fYear

2001

fDate

6-6 June 2001

Firstpage

207

Lastpage

209

Abstract

A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced ´zero thickness´ copper barrier applications. This process, which is carried out at substrate temperatures below 450°C on commercial ALD reactor, employs TBTDET and NH₃ as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.

Keywords

copper; diffusion barriers; integrated circuit interconnections; tantalum compounds; vacuum deposition; 450 C; Cu; TaN; copper interconnect; high aspect ratio structure; low-k dielectric substrate; metalorganic atomic layer deposition; microelectronics processing; tantalum nitride; zero thickness diffusion barrier; Atomic layer deposition; Chemical vapor deposition; Copper; Dielectric substrates; Inductors; Nitrogen; Robustness; Scanning electron microscopy; Semiconductor films; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International

Conference_Location

Burlingame, CA, USA

Print_ISBN

0-7803-6678-6

Type

conf

DOI

10.1109/IITC.2001.930062

Filename

930062