Title :
InGaAs/InP CAQW exchange-Bragg resonator based wavelength-selective optical intensity modulator
Author :
De Francisco, Carlos Alberto ; Silva, Milson Tadeu Camargo
Author_Institution :
Eng. Sch. of Sao Carlos, Sao Paulo Univ., Brazil
Abstract :
We present a novel InGaAs/InP CAQW wavelength-selective optical intensity modulator based on exchange-Bragg resonator. Bandwidth in excess of 100 GHz and low voltage operation, 1.67 V, for an extinction ratio of 20 dB are predicted for a chirp-free modulator
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; optical resonators; semiconductor quantum wells; 1.67 V; 100 GHz; InGaAs-InP; InGaAs/InP CAQW exchange-Bragg resonator; bandwidth; chirp-free modulator; coupled asymmetric quantum well; extinction ratio; low voltage operation; wavelength-selective optical intensity modulator; Absorption; Chirp modulation; Extinction ratio; Indium gallium arsenide; Indium phosphide; Intensity modulation; Multiplexing; Optical modulation; Optical resonators; Optical waveguides;
Conference_Titel :
Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International
Conference_Location :
Natal
Print_ISBN :
0-7803-4165-1
DOI :
10.1109/SBMOMO.1997.646833
