Title :
Manufacturing-compatible methods for the formation of Cu(In,Ga)Se 2 thin films
Author :
Gabor, A.M. ; Britt, J.S. ; Delahoy, A.E. ; Noufi, R. ; Kiss, Z.J.
Author_Institution :
Energy Photovoltaics Inc., Princeton, NJ, USA
Abstract :
The authors have developed suitable methods of Cu(In,Ga)Se2 thin-film formation for application in large-scale manufacturing equipment. Total-area solar cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and VOC uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The fill factor of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor device manufacture; semiconductor device testing; semiconductor thin films; solar cells; surface treatment; Cu(In,Ga)Se2 solar cells; CuInGaSe2; chemical treatment; fill factor; film thickness; large-area films; manufacturing-compatible methods; open-circuit voltage; small-area solar cells; surface modification; thin film formation; thin film semiconductors; Annealing; Costs; Glass; Manufacturing; Photovoltaic cells; Plasma temperature; Renewable energy resources; Sputtering; Substrates; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564271
