DocumentCode
3194311
Title
Integrated W-silicide metal resistor for advanced CMOS technologies
Author
Pai, C.S. ; Bude, M.K. ; Frei, M. ; Rogers, S.N. ; Jacobson, D.C. ; Merchant, S.M. ; Hui, F. ; Liu, R. ; Gregor, R.W.
Author_Institution
Agere Syst., Murray Hill, NJ, USA
fYear
2001
fDate
6-6 June 2001
Firstpage
216
Lastpage
218
Abstract
WSix metal resistors have been processed and characterized for CMOS technologies. It demonstrates good precision control and excellent quality factors for resistor applications. It can also be used for electrode of MIM capacitor simultaneously. This material and process are compatible for both Al and Cu back-end technologies and can be integrated as a module in these interconnects.
Keywords
CMOS integrated circuits; MIM devices; capacitors; electrodes; integrated circuit interconnections; resistors; tungsten compounds; CMOS technology; MIM capacitor; WSi; electrode; integrated circuit interconnect; tungsten silicide metal resistor; Annealing; CMOS technology; Conductivity; Integrated circuit interconnections; MIM capacitors; Metal-insulator structures; Resistors; Substrates; System-on-a-chip; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location
Burlingame, CA, USA
Print_ISBN
0-7803-6678-6
Type
conf
DOI
10.1109/IITC.2001.930065
Filename
930065
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