Title :
Integrated W-silicide metal resistor for advanced CMOS technologies
Author :
Pai, C.S. ; Bude, M.K. ; Frei, M. ; Rogers, S.N. ; Jacobson, D.C. ; Merchant, S.M. ; Hui, F. ; Liu, R. ; Gregor, R.W.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
WSix metal resistors have been processed and characterized for CMOS technologies. It demonstrates good precision control and excellent quality factors for resistor applications. It can also be used for electrode of MIM capacitor simultaneously. This material and process are compatible for both Al and Cu back-end technologies and can be integrated as a module in these interconnects.
Keywords :
CMOS integrated circuits; MIM devices; capacitors; electrodes; integrated circuit interconnections; resistors; tungsten compounds; CMOS technology; MIM capacitor; WSi; electrode; integrated circuit interconnect; tungsten silicide metal resistor; Annealing; CMOS technology; Conductivity; Integrated circuit interconnections; MIM capacitors; Metal-insulator structures; Resistors; Substrates; System-on-a-chip; Thermal resistance;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930065
