Title :
Line width dependence of copper resistivity
Author :
Jiang, Qing-Tang ; Tsai, Ming-Hsing ; Havemann, R.H.
Author_Institution :
Int. Sematech., Austin, TX, USA
Abstract :
Studies were carried out to characterize the copper line resistivity as a function of linewidth for sub-130 nm feature size. The Cu line resistivity was found to increase rapidly as the feature size becomes smaller than 0.2 μm. Electron scattering from both sidewalls and grain boundaries played significant roles even at geometries several times of the electron mean free path in Cu.
Keywords :
copper; electrical resistivity; electron mean free path; metallisation; 130 nm; Cu; copper line resistivity; electron mean free path; grain boundary scattering; linewidth dependence; sidewall scattering; Annealing; Atherosclerosis; Conductivity; Copper; Electrons; Etching; Grain boundaries; Morphology; Scattering; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930068
