• DocumentCode
    3194344
  • Title

    Line width dependence of copper resistivity

  • Author

    Jiang, Qing-Tang ; Tsai, Ming-Hsing ; Havemann, R.H.

  • Author_Institution
    Int. Sematech., Austin, TX, USA
  • fYear
    2001
  • fDate
    6-6 June 2001
  • Firstpage
    227
  • Lastpage
    229
  • Abstract
    Studies were carried out to characterize the copper line resistivity as a function of linewidth for sub-130 nm feature size. The Cu line resistivity was found to increase rapidly as the feature size becomes smaller than 0.2 μm. Electron scattering from both sidewalls and grain boundaries played significant roles even at geometries several times of the electron mean free path in Cu.
  • Keywords
    copper; electrical resistivity; electron mean free path; metallisation; 130 nm; Cu; copper line resistivity; electron mean free path; grain boundary scattering; linewidth dependence; sidewall scattering; Annealing; Atherosclerosis; Conductivity; Copper; Electrons; Etching; Grain boundaries; Morphology; Scattering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    0-7803-6678-6
  • Type

    conf

  • DOI
    10.1109/IITC.2001.930068
  • Filename
    930068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3194344