Title :
MOVPE growth and characterization of Ga(NAsP) laser structures monolithically integrated on Si (001) substrates
Author :
Liebich, S. ; Zimprich, M. ; Ludewig, P. ; Beyer, A. ; Volz, K. ; Stolz, W. ; Kunert, B. ; Hossain, N. ; Jin, S.R. ; Sweeney, S.J.
Author_Institution :
Dept. of Phys., Philipps-Univ., Marburg, Germany
Abstract :
In this work we focus on the MOVPE growth of Ga(NAsP) laser structures for electrical current injection lattice matched on exactly orientated Si substrates and their structural characterization.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; integrated optics; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; Ga(NAsP); MOVPE growth; Si; Si (001) substrates; electrical current injection lattice; monolithical integration; multiquantum well laser structure; orientated substrates; structural characterization; Crystals; Lattices; Semiconductor lasers; Silicon; Substrates; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642712
