Title :
First lasing operation of injection type membrane GaInAsP DFB laser with lateral current injection BH structure
Author :
Okumura, Tadashi ; Koguchi, Takayuki ; Ito, Hitomi ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
An injection type semiconductor membrane DFB laser with low index polymer cladding layers was demonstrated for the first time by lateral current injection structure. Room temperature, pulsed lasing operation was realized with a threshold current of 83 mA for the stripe width of 3.2 μm and the cavity length of 420 μm.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; optical polymers; quantum well lasers; GaInAsP; buried heterostructure-distributed feedback laser; cavity length; current 83 mA; injection type semiconductor membrane; lasing operation; lateral current injection; polymer cladding layers; pulsed lasing operation; size 3.2 mum; size 420 mum; stripe width; temperature 293 K to 298 K; threshold current; Biomembranes; Gratings; Laser feedback; Optical device fabrication; Optical pumping; Semiconductor lasers; Substrates;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642713
