DocumentCode
3194362
Title
First lasing operation of injection type membrane GaInAsP DFB laser with lateral current injection BH structure
Author
Okumura, Tadashi ; Koguchi, Takayuki ; Ito, Hitomi ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
137
Lastpage
138
Abstract
An injection type semiconductor membrane DFB laser with low index polymer cladding layers was demonstrated for the first time by lateral current injection structure. Room temperature, pulsed lasing operation was realized with a threshold current of 83 mA for the stripe width of 3.2 μm and the cavity length of 420 μm.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; optical polymers; quantum well lasers; GaInAsP; buried heterostructure-distributed feedback laser; cavity length; current 83 mA; injection type semiconductor membrane; lasing operation; lateral current injection; polymer cladding layers; pulsed lasing operation; size 3.2 mum; size 420 mum; stripe width; temperature 293 K to 298 K; threshold current; Biomembranes; Gratings; Laser feedback; Optical device fabrication; Optical pumping; Semiconductor lasers; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642713
Filename
5642713
Link To Document