Title :
Realistic copper interconnect performance with technological constraints
Author :
Kapur, Pawan ; McVittie, James P. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Abstract :
Most interconnect performance evaluations with copper, such as, line delays and repeater analysis are done assuming a constant resistivity. However, increase in electron surface scattering and fractional barrier cross section area results in a higher effective Cu resistivity (ρ eff) with dimensional shrinkage. This work models above effects, establishing reliable, future, resistivity trends for different barrier deposition technologies and thicknesses, wire temperature and copper/barrier interface quality. The resistivity trends are used to obtain realistic, future, interconnect performance metrics with Cu. These metrics are found to be a lot worse than predicted by a constant copper resistivity.
Keywords :
copper; diffusion barriers; electrical resistivity; integrated circuit interconnections; Cu; copper interconnect; diffusion barrier; dimensional shrinkage; electrical resistivity; electron surface scattering; fractional cross-sectional area; line delay; repeater analysis; Conductivity; Copper; Delay lines; Electrons; Measurement; Performance analysis; Repeaters; Scattering; Temperature; Wire;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930070