DocumentCode
3194389
Title
Evidence of dislocation loops as a driving force for self-annealing in electroplated Cu films
Author
Lee, Haebum ; Lopatin, Sergey D. ; Marshall, Ann E. ; Wong, S Simon
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
2001
fDate
6-6 June 2001
Firstpage
236
Lastpage
238
Abstract
This paper demonstrates the existence of dislocation loops and their influence on the kinetics of self-annealing in electroplated Cu film. Plating with higher deposition rate produces more dislocation loops in the Cu film, resulting in faster self-annealing process. Kinetic calculations including this effect give a good correspondence to the experimental observations.
Keywords
annealing; copper; dislocation loops; electroplated coatings; metallic thin films; Cu; Cu electroplated film; dislocation loop; self-annealing kinetics; Additives; Copper; Crystallization; Current density; Electric variables control; Electrical resistance measurement; Grain size; Kinetic theory; Microstructure; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location
Burlingame, CA, USA
Print_ISBN
0-7803-6678-6
Type
conf
DOI
10.1109/IITC.2001.930071
Filename
930071
Link To Document