• DocumentCode
    3194389
  • Title

    Evidence of dislocation loops as a driving force for self-annealing in electroplated Cu films

  • Author

    Lee, Haebum ; Lopatin, Sergey D. ; Marshall, Ann E. ; Wong, S Simon

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    2001
  • fDate
    6-6 June 2001
  • Firstpage
    236
  • Lastpage
    238
  • Abstract
    This paper demonstrates the existence of dislocation loops and their influence on the kinetics of self-annealing in electroplated Cu film. Plating with higher deposition rate produces more dislocation loops in the Cu film, resulting in faster self-annealing process. Kinetic calculations including this effect give a good correspondence to the experimental observations.
  • Keywords
    annealing; copper; dislocation loops; electroplated coatings; metallic thin films; Cu; Cu electroplated film; dislocation loop; self-annealing kinetics; Additives; Copper; Crystallization; Current density; Electric variables control; Electrical resistance measurement; Grain size; Kinetic theory; Microstructure; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    0-7803-6678-6
  • Type

    conf

  • DOI
    10.1109/IITC.2001.930071
  • Filename
    930071