Title :
First-principles study of light emission from germanium quantum-well
Author :
Suwa, Yuji ; Saito, Shin-ichi
Author_Institution :
Adv. Res. Lab., Hitachi, Ltd., Saitama, Japan
Abstract :
This paper presents light emission properties of germanium quantum-well and optical gains of Ge(001) and Ge(111) thin films as a function of the number of atomic layers. Gap-crossing transitions between conduction bands and valence bands only are taken into account.
Keywords :
ab initio calculations; conduction bands; elemental semiconductors; germanium; semiconductor quantum wells; semiconductor thin films; valence bands; Ge; atomic layers; conduction bands; first-principles study; gap-crossing transitions; germanium quantum-well; light emission; optical gains; thin films; valence bands; Atom optics; Atomic layer deposition; Charge carrier density; Electron optics; Germanium; Silicon; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642718
