DocumentCode
3194464
Title
First-principles study of light emission from germanium quantum-well
Author
Suwa, Yuji ; Saito, Shin-ichi
Author_Institution
Adv. Res. Lab., Hitachi, Ltd., Saitama, Japan
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
131
Lastpage
132
Abstract
This paper presents light emission properties of germanium quantum-well and optical gains of Ge(001) and Ge(111) thin films as a function of the number of atomic layers. Gap-crossing transitions between conduction bands and valence bands only are taken into account.
Keywords
ab initio calculations; conduction bands; elemental semiconductors; germanium; semiconductor quantum wells; semiconductor thin films; valence bands; Ge; atomic layers; conduction bands; first-principles study; gap-crossing transitions; germanium quantum-well; light emission; optical gains; thin films; valence bands; Atom optics; Atomic layer deposition; Charge carrier density; Electron optics; Germanium; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642718
Filename
5642718
Link To Document