Title :
Electrical reliability of low dielectric constant diffusion barrier (a-SiC:H) for copper interconnect
Author :
Fang, Kuo-Lung ; Tsui, Bing-Yue ; Yang, Cheng-Chi ; Lee, Shyh-Dar
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The electrical stability and reliability of the Trimethylsilane (3MS) based a-SiC:H (SiC) film was investigated for the first time. Capacitance-Voltage (C-V) characteristic instability was observed due to polarization at high electrical field and electron injection at low electrical field. By adding nitrogen content in the film, the dielectric constant and leakage current are reduced but the time dependent dielectric breakdown (TDDB) lifetime becomes worse at high nitrogen content. It is suggested that the SiC deposition can be optimized at moderate nitrogen content to compromise all film properties.
Keywords :
copper; dielectric polarisation; dielectric thin films; diffusion barriers; electric breakdown; hydrogen; integrated circuit interconnections; leakage currents; permittivity; silicon compounds; Cu-SiC:H; a-SiC:H film; capacitance-voltage characteristics; copper interconnect; dielectric constant; dielectric polarization; diffusion barrier; electric field; electrical reliability; electrical stability; electron injection; leakage current; low-k dielectric; nitrogen content; time dependent dielectric breakdown lifetime; trimethylsilane; Capacitance-voltage characteristics; Copper; Dielectric breakdown; Dielectric constant; Electrons; Leakage current; Nitrogen; Polarization; Silicon carbide; Stability;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930075
