Title :
Superstrate-type CuInSe2 thin film solar cells with selenide buffer layers
Author :
Nakada, Tokio ; Kume, Tomoyuki ; Kunioka, Akio
Author_Institution :
Dept. of Electr. Eng. & Electron., Aoyama Gakuin Univ., Tokyo, Japan
Abstract :
Superstrate-type solar cells with a Au/CuInSe2/Inx Sey/ZnO:Al/glass structure were investigated. The CuInSe2 (CIS) films were deposited using the coevaporation method with Na2Se at 350°C. Even at relatively low substrate temperatures, the use of the sodium compound enhanced the (112) orientation of the chalcopyrite structure and also improved the cell performance. After CIS deposition the InxSey layers disappeared and were converted into In-rich CIS layers through interdiffusion. A preliminary cell yielded an efficiency of 5.1% after light soaking under forward bias
Keywords :
II-VI semiconductors; aluminium; copper compounds; gold; indium compounds; semiconductor device testing; semiconductor doping; semiconductor thin films; semiconductor-metal boundaries; solar cells; ternary semiconductors; vapour deposited coatings; vapour deposition; zinc compounds; (112) orientation; 350 C; 5.1 percent; Au-CuInSe2-InSe-ZnO:Al; Au/CuInSe2/InxSey/ZnO:Al/glass solar cells; PV performance; chalcopyrite structure; coevaporation deposition method; forward bias; interdiffusion; light soaking; substrate temperature; superstrate-type solar cells; thin film semiconductor; Buffer layers; Computational Intelligence Society; Fabrication; Glass; Gold; Photovoltaic cells; Substrates; Temperature; Transistors; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564272
