DocumentCode
3194540
Title
40 Gb/s AlGaInAs electroabsorption modulated laser module with novel packaging design
Author
Sun, Changzheng ; Xiong, Bing ; Xu, Jianming ; Yuan, He ; Luo, Yi
Author_Institution
Dept. of Electron. Eng., Tsinghua Nat. Lab. for Inf. Sci. & Technol., Beijing, China
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
121
Lastpage
122
Abstract
A 40 Gb/s AlGaInAs electroabsorption modulated laser (EML) module with optimized performance is reported. A novel modulation signal feeding line is adopted for module packaging, and dynamic extinction ratio over 8.2 dB is demonstrated at 43 Gb/s modulation.
Keywords
III-V semiconductors; aluminium compounds; electroabsorption; extinction coefficients; gallium arsenide; indium compounds; optical modulation; packaging; quantum well lasers; AlGaInAs; bit rate 40 Gbit/s; bit rate 43 Gbit/s; dynamic extinction ratio; electroabsorption modulated laser module; modulation signal feeding line; module packaging; multiquantum well structure; packaging design; Bonding; Capacitance; Coplanar waveguides; Extinction ratio; IEL; Modulation; Packaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642721
Filename
5642721
Link To Document