Title :
Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes
Author :
Jiang, Haisong ; Bastawrous, Hany Ayad ; Hagio, Takuma ; Matsuo, Shinji ; Hamamoto, Kiichi
Author_Institution :
I-Eggs (Interdiscipl. Grad. Sch. of Eng. Sci.), Kyushu Univ., Fukuoka, Japan
Abstract :
Low hysteresis threshold current (39mA) was demonstrated using active multi-mode interferometer bi-stable laser diodes. Higher cross-gain saturation with significant reduction of saturable absorber region resulted in low threshold with maintaining wide hysteresis.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser stability; light interferometers; optical bistability; optical saturable absorption; quantum well lasers; waveguide lasers; InGaAsP-InGaAsP; active multimode interferometer bistable laser diodes; current 39 mA; higher cross-gain saturation; low hysteresis threshold current; multiple-quantum well laser; saturable absorber region; Power generation;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642722
