Title :
Electromigration threshold in single-damascene copper interconnects with SiO/sub 2/ dielectrics
Author :
Wang, P.-C. ; Filippi, R.G. ; Gignac, L.M.
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
Abstract :
We demonstrate the electromigration threshold, or the so-called short-length effect, in single-damascene copper interconnects with SiO 2 dielectrics. With standard electrical lifetime measurements and a simplified equation based on the Blech model, the length-dependent electromigration behavior is studied quantitatively over a temperature range between 295°C and 400°C. It is shown that the electromigration threshold becomes more prominent with decreasing temperature. The applicability of the proposed equation is justified, and the practical aspects of the electromigration threshold in copper technologies are discussed.
Keywords :
copper; dielectric thin films; electromigration; integrated circuit interconnections; silicon compounds; 295 to 400 C; Blech model; Cu-SiO/sub 2/; SiO/sub 2/ dielectric; electrical lifetime; electromigration threshold; short-length effect; single-damascene copper interconnect; Cathodes; Compressive stress; Copper; Current density; Dielectrics; Electric resistance; Electromigration; Equations; Integrated circuit interconnections; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930079
