Title :
High-performance 0.15-/spl mu/m-gate-length pHEMTs enhanced with a low-temperature-grown GaAs buffer
Author :
Actis, R. ; Nichols, K.B. ; Kopp, W.F. ; Rogers, T.J. ; Smith, F.W.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
An improved GaAs power pHEMT is presented. The device utilizes a low-temperature-grown (LTG) GaAs buffer layer instead of the conventional-buffer layers commonly used by pHEMT manufacturers. When contrasted with identical devices using a conventional buffer, these LTG-buffered pHEMTs have shown a 45% increase in channel breakdown voltage, a 12% increase in power output, and a record 63% power-added efficiency at 20 GHz.<>
Keywords :
III-V semiconductors; gallium arsenide; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; 0.15 mum; 20 GHz; 63 percent; DC characteristics; GaAs; GaAs power pHEMT; RF characteristics; channel breakdown voltage; gate length; low-temperature-grown GaAs buffer layer; power output; power-added efficiency; Buffer layers; Degradation; Frequency; Gallium arsenide; Laboratories; MESFETs; Manufacturing; PHEMTs; Power generation; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405950
