• DocumentCode
    3194664
  • Title

    Understanding and eliminating defects in electroplated Cu films

  • Author

    Lu, J.P. ; Chen, L. ; Gonzalez, D. ; Guo, H.L. ; Rose, D.J. ; Marudachalam, M. ; Hsu, W.Y. ; Liu, H.Y. ; Cataldi, F. ; Chatterjee, B. ; Smith, P.B. ; Holverson, P. ; Guldi, R.L. ; Russell, N.M. ; Shinn, G. ; Zuhoski, S. ; Luttmer, J.D.

  • Author_Institution
    Silicon. Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2001
  • fDate
    6-6 June 2001
  • Firstpage
    280
  • Lastpage
    282
  • Abstract
    Electrochemical deposition (ECD) is currently the only practical process for manufacturing Cu interconnections on silicon integrated circuits. However, this application is relatively new and some issues related to ECD defects remain to be resolved. One of the most important types of ECD defects consists of voids clustered together to form curved lines, referred to as "swirl defects". The swirl defect is a common phenomenon in ECD and is often associated with aged seed. Control experiments aimed in understanding the origin of this defect are discussed. A novel method to eliminate the defect is also presented.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; copper; electroplated coatings; electroplating; integrated circuit interconnections; integrated circuit metallisation; scanning electron microscopy; surface contamination; voids (solid); Cu; SEM; XPS; XRD; aged seed; buried defects; clustered voids; contact angle; curved lines; damascene; defects elimination; defects origin; electrochemical deposition; electroplated films; interconnections; metallisation; surface contamination; swirl defects; Copper; Inspection; Instruments; Integrated circuit interconnections; Integrated circuit technology; Manufacturing processes; Metallization; Optical films; Scanning electron microscopy; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
  • Conference_Location
    Burlingame, CA, USA
  • Print_ISBN
    0-7803-6678-6
  • Type

    conf

  • DOI
    10.1109/IITC.2001.930084
  • Filename
    930084