Title :
Understanding and eliminating defects in electroplated Cu films
Author :
Lu, J.P. ; Chen, L. ; Gonzalez, D. ; Guo, H.L. ; Rose, D.J. ; Marudachalam, M. ; Hsu, W.Y. ; Liu, H.Y. ; Cataldi, F. ; Chatterjee, B. ; Smith, P.B. ; Holverson, P. ; Guldi, R.L. ; Russell, N.M. ; Shinn, G. ; Zuhoski, S. ; Luttmer, J.D.
Author_Institution :
Silicon. Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Electrochemical deposition (ECD) is currently the only practical process for manufacturing Cu interconnections on silicon integrated circuits. However, this application is relatively new and some issues related to ECD defects remain to be resolved. One of the most important types of ECD defects consists of voids clustered together to form curved lines, referred to as "swirl defects". The swirl defect is a common phenomenon in ECD and is often associated with aged seed. Control experiments aimed in understanding the origin of this defect are discussed. A novel method to eliminate the defect is also presented.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; copper; electroplated coatings; electroplating; integrated circuit interconnections; integrated circuit metallisation; scanning electron microscopy; surface contamination; voids (solid); Cu; SEM; XPS; XRD; aged seed; buried defects; clustered voids; contact angle; curved lines; damascene; defects elimination; defects origin; electrochemical deposition; electroplated films; interconnections; metallisation; surface contamination; swirl defects; Copper; Inspection; Instruments; Integrated circuit interconnections; Integrated circuit technology; Manufacturing processes; Metallization; Optical films; Scanning electron microscopy; Silicon;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930084
