DocumentCode :
3194665
Title :
Variation of the permittivity and conductivity of a single crystalline α-SiO2 with the surface charge density
Author :
Mohamed, A. Bel Hadj ; Raouadi, K. ; Cheffi, C. ; Le-Gressus, C.
Author_Institution :
Dept. de Phys., Fac. des Sci. de Tunis, Tunisia
fYear :
1995
fDate :
22-25 Oct 1995
Firstpage :
444
Lastpage :
446
Abstract :
The complex permittivity and conductivity can be determined by using the technique that is based on cavity perturbation theory. A rectangular cavity working in the TE103 mode at a frequency of 9.273 GHz has been used. Rectangular Z cut α-SiO2 samples are inserted in the resonator at a maximum electric field region. The depolarisation factors are assumed to be known, In order to remove residual charge samples were systematically fired at 800°C. Each sample is charged on its free upper surface by using an electron beam radiation of 30 kV. The surface charge density σch is controlled by defocusing the incident beam and evaluated by using the mirror method. Electrons are trapped on defects and increase the polarisation of the charged dielectric. The permittivity and the conductivity are measured
Keywords :
cavity resonators; dielectric polarisation; dielectric relaxation; electric breakdown; electrical conductivity; electron beam effects; permittivity; perturbation techniques; silicon compounds; space charge; surface charging; 30 kV; 800 degC; 9.273 GHz; SiO2; TE103 mode; Z cut samples; cavity perturbation theory; charged dielectric; complex permittivity; conductivity; depolarisation factors; dielectric breakdown; electron beam radiation; maximum electric field region; mirror method; rectangular cavity; residual charge; surface charge density; Conductivity measurement; Crystallization; Dielectric breakdown; Dielectric measurements; Electric breakdown; Electromagnetic fields; Electromagnetic wave polarization; Electron traps; Permittivity measurement; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
Conference_Location :
Virginia Beach, VA
Print_ISBN :
0-7803-2931-7
Type :
conf
DOI :
10.1109/CEIDP.1995.483758
Filename :
483758
Link To Document :
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