• DocumentCode
    3194668
  • Title

    Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a silicon substrate grown by MOVPE

  • Author

    Hossain, Nadir ; Jin, Shirong R. ; Sweeney, Stephen J. ; Liebich, Sven ; Ludewig, Peter ; Zimprich, Martin ; Kunert, Bernardette ; Volz, Kerstin ; Stolz, Wolfgang

  • Author_Institution
    Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    Lasing operation up to 120K is reported for direct band-gap GaNAsP grown monolithically on a silicon substrate. Jth=0.81kAcm-2 is measured at 80K with a To of 97K from 40-120K for a HR coated device.
  • Keywords
    III-V semiconductors; MOCVD; boron compounds; gallium arsenide; gallium compounds; integrated optics; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; Ga(NAsP)-(BGa)P; HR coated devices; MOVPE; Si; direct band-gap materials; lasing properties; monolithically integrated QW lasers; silicon substrate; temperature 40 K to 120 K; Epitaxial layers; Lasers; Silicon; Strain; Substrates; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642727
  • Filename
    5642727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3194668