DocumentCode :
3194668
Title :
Lasing properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on a silicon substrate grown by MOVPE
Author :
Hossain, Nadir ; Jin, Shirong R. ; Sweeney, Stephen J. ; Liebich, Sven ; Ludewig, Peter ; Zimprich, Martin ; Kunert, Bernardette ; Volz, Kerstin ; Stolz, Wolfgang
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
109
Lastpage :
110
Abstract :
Lasing operation up to 120K is reported for direct band-gap GaNAsP grown monolithically on a silicon substrate. Jth=0.81kAcm-2 is measured at 80K with a To of 97K from 40-120K for a HR coated device.
Keywords :
III-V semiconductors; MOCVD; boron compounds; gallium arsenide; gallium compounds; integrated optics; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; Ga(NAsP)-(BGa)P; HR coated devices; MOVPE; Si; direct band-gap materials; lasing properties; monolithically integrated QW lasers; silicon substrate; temperature 40 K to 120 K; Epitaxial layers; Lasers; Silicon; Strain; Substrates; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642727
Filename :
5642727
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3194668
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