DocumentCode
3194687
Title
Bismide-alloys for higher efficiency infrared semiconductor lasers
Author
Sweeney, Stephen J.
Author_Institution
Dept. of Phys., Univ. of Surrey, Guildford, UK
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
111
Lastpage
112
Abstract
The incorporation of Bismuth in III-V alloys, such as GaAsBi/GaAs provides a preferential semiconductor band structure to suppress non-radiative recombination and optical losses, improving the efficiency and temperature stability of infrared semiconductor lasers.
Keywords
III-V semiconductors; band structure; gallium arsenide; optical losses; semiconductor lasers; GaAsBi-GaAs; III-V alloys; bismide-alloys; higher efficiency infrared semiconductor lasers; nonradiative recombination; optical losses; semiconductor band structure; temperature stability; Bismuth; Gallium arsenide; Laser stability; Laser transitions; Photonic band gap; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642728
Filename
5642728
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