Title :
Wet or plasma clean? Competing or complementary? A dual damascene study with Si-OC-H dielectric on copper wiring
Author :
Louis, D. ; Assous, Myriam ; Blanc, R. ; Brun, Ph. ; Arvet, C. ; Lajoinie, E. ; Holmes, D.
Author_Institution :
Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
The integration of dual damascene-copper/low-k structures requires the development of new cleaning processes and chemistries compatible with the new materials. This study examines the opportunities for plasma cleaning and wet cleaning.
Keywords :
dielectric thin films; integrated circuit interconnections; plasma materials processing; silicon compounds; surface cleaning; Cu; SiOC; SiOC-Cu; SiOCH; SiOCH-Cu; ashing; concentration dependence; dielectric on copper wiring; dual damascene integration; dual damascene-copper; low-k structures; plasma cleaning; via first integration; wet cleaning; Adhesives; Cleaning; Copper; Dielectric materials; Etching; Plasma applications; Plasma chemistry; Polymers; Resists; Silicon;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930086
