Title :
Gallium content enhancement in CuIn1-xGaxSe 2 thin films prepared by two-selenizations process using Se vapor [solar cells]
Author :
Dhere, Neelkanth G. ; Lynn, Kevin W.
Author_Institution :
Florida Solar Energy Center, Cocoa, FL, USA
Abstract :
Gallium content in CuIn1-xGaxSe2 thin film solar cells prepared by a two-selenization process using Se vapor has been enhanced by optimizing the metallic layer sequence and selenization parameters. Maintaining a high selenium vapor incidence rate of ⩾50 Å s-1 increased the Ga content x in the formula CuIn1-xGaxSe2 from 0.06 to 0.11. Fast temperature rise of 50-90°C min-1 and controlled cooling-down rate to 300°C with a lower Se vapor incidence rate increased the Ga content still further. CuIn1-xGaxSe2 thin-film solar cells having Ga content x of 0.18 showed an open-circuit voltage Voc of 451.8 mV, a short-circuit current density Jsc of 34.5 mA, a fill factor of 57.87%, and a total-area efficiency of 9.02% with a fairly constant spectral response. The results are significant because the process can be easily scaled up for economic manufacture
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor device testing; semiconductor thin films; solar cells; 300 C; 34.5 mA; 451.8 mV; 9.02 percent; CuIn1-xGaxSe2 solar cells; CuInGeSe2; commercial manufacture; constant spectral response; cooling rate; fill factor; open-circuit voltage; short-circuit current density; temperature rise; thin film semiconductors; total-area efficiency; two-selenization process; Circuits; Commercialization; DH-HEMTs; Gallium; Indium; Manufacturing processes; Photovoltaic cells; Solar energy; Temperature control; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.564273
