Title :
Single and dual damascene integration of a spin-on porous ultra low-k material
Author :
Mosig, K. ; Jacobs, T. ; Kofron, P. ; Daniels, M. ; Brennan, K. ; Gonzales, A. ; Augur, R. ; Wetzel, J. ; Havemann, R. ; Shiota, A.
Author_Institution :
Int.. Sematech., Austin, TX, USA
Abstract :
For future high performance logic semiconductor products it is essential to lower the dielectric constant k of the intra- and interlayer isolators in combination with Cu single and dual damascene metallisation. In this paper we report on the first successful single and dual damascene integration of a porous methylsilsesquioxane based spin-on dielectric, JSR LKD. Deposition, etch, resist strip, clean and CMP behaviour and electrical results from both single and dual damascene integration are discussed.
Keywords :
dielectric thin films; integrated circuit interconnections; metallisation; plasma materials processing; polymer films; porous semiconductors; spin coating; sputter etching; surface cleaning; ultraviolet lithography; CMP behaviour; Cu; JSR LKD dielectric; ashing; cleaning behaviour; deposition; dual damascene metallisation; plasma cleaning; porous methylsilsesquioxane; resist strip; single damascene metallisation; spin-on porous ultralow-k material; sputter etch; Damascene integration; Dielectric constant; Dielectric materials; Etching; Isolators; Logic; Metallization; Resists; Semiconductor materials; Strips;
Conference_Titel :
Interconnect Technology Conference, 2001. Proceedings of the IEEE 2001 International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
0-7803-6678-6
DOI :
10.1109/IITC.2001.930087
