DocumentCode
3194736
Title
Impact of onpolar plane for deep ultraviolet laser diodes based on AlGa/AlN quantum wells
Author
Kojima, K. ; Yamaguchi, A.A. ; Funato, M. ; Kawakami, Y. ; Noda, S.
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
101
Lastpage
102
Abstract
Band structures and optical gain of nonpolar AlGaN/AlN quantum wells were investigated. It was found that nonpolar quantum wells drastically improved optical gain and anisotropy compared to those of c-plane quantum wells.
Keywords
III-V semiconductors; aluminium compounds; band structure; gallium compounds; quantum well lasers; wide band gap semiconductors; AlGa-AlN; band structure; deep ultraviolet laser diodes; nonpolar quantum wells; optical anisotropy; optical gain; Aluminum gallium nitride; Anisotropic magnetoresistance; Gallium; Geometrical optics; Light emitting diodes; Optical polarization; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642731
Filename
5642731
Link To Document