Title :
Development of AlGaN-based deep-UV LEDs using high-quality AlN on sapphire
Author :
Hirayama, Hideki ; Tsukada, Yusuke ; Akiba, Masahiro ; Kamata, Norihiko
Author_Institution :
RIKEN, Saitama, Japan
Abstract :
AlGaN and quaternary InAlGaN alloys are attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-emitting diodes (LEDs) or laser diodes (LDs) [1,2]. We demonstrated 222-351 nm DUV LEDs with AlGaN and InAlGaN quantum wells (QWs) fabricated on low threading dislocation density (TDD) A1N buffer on sapphire [1-6].
Keywords :
III-V semiconductors; aluminium alloys; aluminium compounds; gallium alloys; gallium compounds; indium alloys; light emitting diodes; sapphire; semiconductor quantum wells; AlGaN; AlN; InAlGaN; deep-UV LED; deep-ultraviolet light-emitting diodes; laser diodes; quantum wells; quaternary alloys; sapphire; threading dislocation density; Aluminum gallium nitride; Atomic layer deposition; Light emitting diodes; Power generation; Rough surfaces; Surface cracks; Surface roughness;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642733
