Title :
Observation of laser action from gallium nitride nanorods under optical pumping
Author :
Lo, M.H. ; Cheng, Y.-J. ; He, Y.N. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report the observation of optically pumped room temperature lasing action from GaN nanopillars. The lasing action occurs at threshold pumping power density of 122 MW/cm2 with a linewidth of 0.38 nm at 363 nm.
Keywords :
gallium compounds; nanophotonics; nanorods; optical pumping; semiconductor lasers; wide band gap semiconductors; GaN; gallium nitride; laser action; nanopillar; nanorods; optical pumping; temperature 293 K to 298 K; threshold pumping power density; wavelength 363 nm; Gallium nitride; Integrated optics; Nickel; Optical device fabrication; Optical pumping; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642734
