Title :
Doping effect on two-state lasing in 1.3µm InAs/GaAs quantum dot lasers
Author :
Wang, Rui ; Yoon, Soon Fatt ; Zhao, Han Xue ; Tong, Cun Zhu ; Liu, Chong Yang ; Cao, Qi
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We have explained the two-state lasing in QD lasers with different doping density by the laser modal gain behavior, and shown that the laser with relatively light doping density can largely suppress the exited-state lasing.
Keywords :
gallium arsenide; indium compounds; quantum dot lasers; semiconductor doping; doping density; doping effect; exited-state lasing; quantum dot lasers; two-state lasing; wavelength 1.3 mum; Doping; Gallium arsenide; Quantum dot lasers; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642745
