• DocumentCode
    3195042
  • Title

    Doping effect on two-state lasing in 1.3µm InAs/GaAs quantum dot lasers

  • Author

    Wang, Rui ; Yoon, Soon Fatt ; Zhao, Han Xue ; Tong, Cun Zhu ; Liu, Chong Yang ; Cao, Qi

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    We have explained the two-state lasing in QD lasers with different doping density by the laser modal gain behavior, and shown that the laser with relatively light doping density can largely suppress the exited-state lasing.
  • Keywords
    gallium arsenide; indium compounds; quantum dot lasers; semiconductor doping; doping density; doping effect; exited-state lasing; quantum dot lasers; two-state lasing; wavelength 1.3 mum; Doping; Gallium arsenide; Quantum dot lasers; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642745
  • Filename
    5642745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195042