DocumentCode :
3195051
Title :
Thermal behavior of 1.55 µm (100) InAs/InP-based quantum dot lasers
Author :
Sayid, Sayid A. ; Marko, Igor P. ; Adams, Alfred R. ; Sweeney, Stephen J. ; Barrios, Pedro ; Poole, Philip
Author_Institution :
Dept. of Phys., Univ. of Surrey, Guildford, UK
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
75
Lastpage :
76
Abstract :
Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a To of ~72K from 220K-290K.
Keywords :
III-V semiconductors; electron-hole recombination; indium compounds; quantum dot lasers; nonradiative recombination; quantum dot lasers; temperature 220 K to 290 K; thermal behavior; wavelength 1.55 mum; Indium phosphide; Laser theory; Quantum dot lasers; Substrates; Temperature measurement; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642746
Filename :
5642746
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3195051
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