A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use

Author

Cameron, Nigel I. ; Taylor, M.R.S. ; McLelland, H. ; Holland, Martin ; Thayne, I.G. ; Elgaid, K. ; Beaumont, S.P.

Author_Institution

Nanoelectron. Res. Centre, Glasgow Univ., UK

fYear

1995

fDate

16-20 May 1995

Firstpage

435

Abstract

A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Several key nano-fabrication techniques are explored for performance, manufacturability and process sensitivity. The molecular beam epitaxially grown pHEMT layer is optimised for reduced short channel effects, high transconductance (690 mS/mm) and reliability. Electron-beam lithography produces ultra short T-gates with high reproducibility. Selective reactive ion etching enables both the depth and width of the gate recess to be accurately controlled. 0.2 /spl mu/m pHEMTs with two 50 /spl mu/m gate fingers exhibit average values for f/sub T/ and f/sub max/ of 121 and 157 GHz with low standard deviations of 4.6 and 2.9 GHz respectively.<>

Keywords

HEMT integrated circuits; III-V semiconductors; electron beam lithography; field effect MIMIC; gallium arsenide; high electron mobility transistors; integrated circuit technology; integrated circuit yield; millimetre wave field effect transistors; molecular beam epitaxial growth; nanotechnology; semiconductor device manufacture; semiconductor growth; sputter etching; 0.2 micron; 121 GHz; 157 GHz; 690 mS/mm; EHF; GaAs; HEMT fabrication process; RIE; W-band; dry-etch process; electron-beam lithography; high yield process; manufacturability; molecular beam epitaxially grown layer; nanofabrication techniques; pseudomorphic HEMT; reliability; selective reactive ion etching; ultra short T-gates; Etching; Fingers; Frequency; Gallium arsenide; Indium phosphide; Lithography; MMICs; Molecular beam epitaxial growth; PHEMTs; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405952

Filename

405952