Title :
1270 nm quantum dot based semiconductor disk lasers
Author :
Butkus, M. ; Rautiainen, J. ; Okhotnikov, Oleg G. ; Mikhrin, S.S. ; Krestnikov, I.L. ; Rafailov, E.U.
Author_Institution :
Sch. of Eng., Phys. & Math., Univ. of Dundee, Dundee, UK
Abstract :
Continuous wave optically pumped semiconductor disk lasers based on Stranski-Krastanow grown quantum dots reach 1270 nm for first time with the output power up to 1.6 W. Samples with different numbers of QD layers are compared.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical pumping; quantum dot lasers; surface emitting lasers; InGaAs-InAs-GaAs-AlAs; Stranski-Krastanow grown quantum dots; continuous wave optically pumped lasers; quantum dot based semiconductor disk lasers; vertical-external-cavity surface-emitting laser; wavelength 1270 nm; Optical pumping; Power generation; Pump lasers; Quantum dot lasers; Surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642748
