Interpretation of capacitance-voltage characteristics in thin-film solar cells using a detailed numerical model

Author

Gray, Jeffery L.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1996

fDate

13-17 May 1996

Firstpage

905

Lastpage

908

Abstract

The objective of this paper is to present a numerical simulation tool that can be used as an aid in the interpretation of the C-V characteristics of thin-film solar cells. The example simulations presented here are for a ZnO/CdS/CuInSe₂ solar cell, but the simulation tool can be used for a variety of solar cells, including CdTe. Model equations for the simulation of the small-signal behavior of semiconductor devices are presented. Sample simulations incorporating these small-signal equations into a detailed numerical model are interpreted

Keywords

electronic engineering computing; numerical analysis; semiconductor device models; semiconductor thin films; software packages; solar cells; ADEPT software; C-V characteristics; CdTe; CdTe solar cells; ZnO-CdS-CuInSe₂; ZnO/CdS/CuInSe₂ solar cells; model equations; numerical model; small-signal behavior; thin-film semiconductors; Capacitance-voltage characteristics; Charge carrier processes; Computational Intelligence Society; Electron traps; Nonlinear equations; Numerical models; Numerical simulation; Photovoltaic cells; Poisson equations; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE

Conference_Location

Washington, DC

ISSN

0160-8371

Print_ISBN

0-7803-3166-4

Type

conf

DOI

10.1109/PVSC.1996.564275

Filename

564275