DocumentCode :
3195149
Title :
Carrier injection-level dependence of lateral ambipolar diffusion in S-K quantum-dot lasers
Author :
Naidu, D. ; Smowton, P.M. ; Summers, H.D.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
67
Lastpage :
68
Abstract :
A strong variation in the lateral ambipolar diffusion length (Ld) with injection-level in quantum-dot lasers results in two regimes of low Ld. Only one of these should be used for efficient laser operation.
Keywords :
carrier lifetime; quantum dot lasers; S-K quantum-dot lasers; carrier injection-level lasers; laser operation; lateral ambipolar diffusion length; Current density; Materials; Optical losses; Quantum dot lasers; Quantum dots; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642750
Filename :
5642750
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3195149
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