Title :
Manufacturable and reliable millimeter wave HJFET MMIC technology using novel 0.15 /spl mu/m MoTiPtAu gates
Author :
Hori, Yoichi ; Onda, Kohei ; Funabashi, Masaki ; Mizutani, Hiroyuki ; Maruhashi, Kenichi ; Fujihara, Akihiro ; Hosoya, Ken´ichi ; Inoue, Takeru ; Kuzuhara, Masaaki
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan
Abstract :
This paper describes a manufacturable and reliable millimeter-wave heterojunction FET (HJFET) MMIC technology, in which a novel 0.15 /spl mu/m MoTiPtAu T-shaped gate has been successfully employed. Excellent DC and RF device characteristics, including Imax of /spl sim/600 mA/mm, BVgd of >10 V and Fmax of /spl sim/200 GHz, were confirmed. High temperature DC-bias tests predict an MTTF of 1.5/spl times/10/sup 7/ hours at a channel temperature of 150/spl deg/C. The 2-stage MMIC amplifier, fabricated using the developed technology, exhibited a 69.5 mW output power with 14.4% power-added efficiency at 56 GHz with good uniformity.<>
Keywords :
JFET integrated circuits; MMIC amplifiers; field effect MIMIC; integrated circuit metallisation; integrated circuit reliability; 0.15 micron; 1.5E7 h; 14.4 percent; 150 C; 2-stage MMIC amplifier; 200 GHz; 56 GHz; 69.5 mW; EHF; MIMIC; MTTF; MoTiPtAu; MoTiPtAu gates; T-shaped gate; channel temperature; heterojunction FET; high temperature DC-bias tests; millimeter wave HJFET MMIC technology; FETs; Heterojunctions; MMICs; Millimeter wave technology; Power amplifiers; Pulp manufacturing; Radio frequency; Radiofrequency amplifiers; Temperature; Testing;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405953
