DocumentCode :
3195383
Title :
Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm
Author :
Arafin, S. ; Bachmann, A. ; Vizbaras, K. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Garching, Germany
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
47
Lastpage :
48
Abstract :
We report on large aperture (DBTJ = 9 μm) GaSb-based BTJ VCSELs at 2.62 μm which show single-mode operation (SMSR > 30 dB) over the entire operating range. Devices are electrically-pumped and operate in continuous-wave mode.
Keywords :
III-V semiconductors; gallium compounds; laser modes; semiconductor lasers; surface emitting lasers; GaSb; buried tunnel junction; continuous wave mode; electrically pumped operation; large aperture single mode based BTJ-VCSEL; single mode operation; wavelength 2.62 mum; Apertures; Heating; Junctions; Laser modes; Temperature; Tuning; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642760
Filename :
5642760
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3195383
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