DocumentCode
3195418
Title
Measurement of internal quantum efficiency and temperature dependence of gain and loss in interband cascade lasers near room-temperature
Author
Chryssis, Athanasios ; Ryu, Geunmin ; Dagenais, Mario
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
43
Lastpage
44
Abstract
We demonstrate that the loss coefficient of 6 and 12 cascade IC lasers is temperature independent over the temperature range of 240 to 300 K. These lasers have an n-doped 200 nm symmetrical separate confinement region. A loss coefficient of 7-8 cm-1 is demonstrated, which compares to the best loss results obtained so far. Measurement on a 12 cascade IC laser with a p-doped separate confinement region indicates a cavity loss of 14 cm-1, in agreement with the expectation of higher losses for p-doped layers. An internal quantum efficiency of 80 % is measured at 240 K. A temperature dependence of the gain coefficient given by TO = 44.5 K is measured and is in agreement with the known threshold dependence on temperature in these lasers. This suggests that Auger recombination is playing an important role in these lasers.
Keywords
quantum cascade lasers; quantum optics; Auger recombination; cascade IC laser; interband cascade lasers; internal quantum efficiency; temperature 240 K; temperature dependence; temperature independent; Current measurement; Integrated circuits; Loss measurement; Measurement by laser beam; Quantum cascade lasers; Semiconductor device measurement; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642762
Filename
5642762
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