Title :
Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Tokyo, Japan
Abstract :
We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.
Keywords :
III-V semiconductors; indium compounds; quantum dot lasers; InAs; highly stacked quantum dot laser; laser emissions; strain compensation technique; threshold current; wavelength tunability; Laser modes; Optical surface waves; Quantum dot lasers; Strain; Substrates; Temperature measurement; molecular beam epitaxy; quantum dot; semiconductor laser; strain compensation;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642763
