• DocumentCode
    3195440
  • Title

    Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique

  • Author

    Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya

  • Author_Institution
    Nat. Inst. of Inf. & Commun. Technol. (NICT), Tokyo, Japan
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.
  • Keywords
    III-V semiconductors; indium compounds; quantum dot lasers; InAs; highly stacked quantum dot laser; laser emissions; strain compensation technique; threshold current; wavelength tunability; Laser modes; Optical surface waves; Quantum dot lasers; Strain; Substrates; Temperature measurement; molecular beam epitaxy; quantum dot; semiconductor laser; strain compensation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642763
  • Filename
    5642763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195440