Title :
Dot state distribution, gain and threshold in 700nm band InP/AlGaInP quantum dot lasers
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Blood, P. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as 150Acm-2 for 2mm long laser device with uncoated facet at 300K.
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; indium compounds; quantum dot lasers; InP-AlGaInP; dot state distribution; growth improvement; growth temperature; quantum dot laser gain; size 2 mm; temperature 300 K; threshold current density; uncoated facet; wafer design; wavelength 700 nm; Absorption; Indium phosphide; Quantum dot lasers; Stationary state; Temperature distribution; Temperature measurement;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642766
