• DocumentCode
    3195509
  • Title

    Dot state distribution, gain and threshold in 700nm band InP/AlGaInP quantum dot lasers

  • Author

    Al-Ghamdi, M.S. ; Smowton, P.M. ; Blood, P. ; Krysa, A.B.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    We investigate the affect of growth and wafer design improvements, such as growth temperature, on the dot size distribution and dot density. This results in a threshold current density as low as 150Acm-2 for 2mm long laser device with uncoated facet at 300K.
  • Keywords
    III-V semiconductors; MOCVD coatings; aluminium compounds; gallium compounds; indium compounds; quantum dot lasers; InP-AlGaInP; dot state distribution; growth improvement; growth temperature; quantum dot laser gain; size 2 mm; temperature 300 K; threshold current density; uncoated facet; wafer design; wavelength 700 nm; Absorption; Indium phosphide; Quantum dot lasers; Stationary state; Temperature distribution; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642766
  • Filename
    5642766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195509