Title :
Catastrophic-optical-damage-free InGaN laser diodes with epitaxially-formed window structure
Author :
Kawaguchi, Masao ; Kasugai, Hideki ; Samonji, Katsuya ; Hagino, Hiroyuki ; Orita, Kenji ; Yamanaka, Kazuhiko ; Yuri, Masaaki ; Takigawa, Shinichi
Author_Institution :
Semicond. Device Res. Center, Panasonic Corp., Nagaokakyo, Japan
Abstract :
High power over 2W free from catastrophic-optical-damage is achieved in InGaN-based lasers with epitaxially-formed window structure. Epitaxial growth over a recess reduces the In composition which eliminates the undesired optical absorption only at the facet.
Keywords :
III-V semiconductors; epitaxial growth; indium compounds; semiconductor lasers; wide band gap semiconductors; InGaN; catastrophic optical damage; catastrophic-optical-damage-free; epitaxial growth; epitaxially formed window structure; laser diodes; Absorption; Cavity resonators; Diode lasers; Epitaxial growth; MOCVD; Photonic band gap; Power generation;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642767
