DocumentCode :
3195558
Title :
Marked efficiency enhancement of 250 nm-band AlGaN Deep-UV LEDs using multiquantum-barrier
Author :
Tsukada, Yusuke ; Hirayama, Hideki ; Akiba, Masahiro ; Maeda, Noritoshi ; Kamata, Norihiko
Author_Institution :
RIKEN, Saitama, Japan
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
25
Lastpage :
26
Abstract :
In this work, we demonstrated dramatic increase of efficiency of 250 nm-band AlGaN DUV-LEDs by introducing multiquantum-barrier (MQB).
Keywords :
III-V semiconductors; aluminium compounds; light emitting diodes; semiconductor lasers; wide band gap semiconductors; AlGaN; DUV-LED; marked efficiency enhancement; multiquantum barrier; wavelength 250 nm; Decision support systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642769
Filename :
5642769
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3195558
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