DocumentCode :
3195594
Title :
Efficiency limitations of green InGaN LEDs and laser diodes
Author :
Crutchley, Benjamin G. ; Marko, Igor P. ; Adams, Alf R. ; Sweeney, Stephen J.
Author_Institution :
Dept. of Phys., Univ. of Surrey, Guildford, UK
fYear :
2010
fDate :
26-30 Sept. 2010
Firstpage :
27
Lastpage :
28
Abstract :
The efficiency of InGaN/GaN blue-green emitters is experimentally investigated. The results provide initial evidence for an inter conduction-band Auger resonance, increasing droop in InGaN LEDs and causing the low radiative efficiency of green laser diodes.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; light emitting diodes; quantum well lasers; wide band gap semiconductors; InGaN-GaN; blue-green emitters; green LED; green laser diodes; inter conduction-band Auger resonance; radiative efficiency; Diode lasers; Green products; Light emitting diodes; Photonic band gap; Radiative recombination; Semiconductor device measurement; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
ISSN :
0899-9406
Print_ISBN :
978-1-4244-5683-3
Type :
conf
DOI :
10.1109/ISLC.2010.5642770
Filename :
5642770
Link To Document :
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