DocumentCode
3195655
Title
InGaN-based true green laser diodes on novel semi-polar {202̄1} GaN substrates
Author
Kyono, Takashi ; Ueno, Masaki ; Katayama, Koji ; Nakamura, Takao
Author_Institution
Semicond. Technol. R&D Labs., Sumitomo Electr. Ind., Ltd., Itami, Japan
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
17
Lastpage
18
Abstract
Recently, 531 nm true green lasing under pulsed operation and 520 nm cw lasing by growing high quality InGaN QWs on novel semi-polar {2021} plane GaN substrates, has been developed. This paper discusses the advantages of utilizing this semi-polar plane for fabricating green LDs.
Keywords
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; wide band gap semiconductors; GaN; InGaN; cw lasing; green laser diodes; green lasing; pulsed operation; semipolar GaN substrates; semipolar plane; wavelength 520 nm; wavelength 531 nm; Diode lasers; Electric fields; Epitaxial growth; Gallium nitride; Substrates; Surface emitting lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642773
Filename
5642773
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