DocumentCode
3195689
Title
1550 nm high contrast grating VCSEL using proton-implant-defined aperture
Author
Chase, Christopher ; Rao, Yi ; Chang-Hasnain, Connie J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
fYear
2010
fDate
26-30 Sept. 2010
Firstpage
13
Lastpage
14
Abstract
We report an HCG VCSEL using a proton-implant-defined aperture operating at 1550 nm. The full laser structure is grown in a single epitaxial run, reducing fabrication complexity and cost, and is polarization stable by design.
Keywords
diffraction gratings; laser beams; laser cavity resonators; semiconductor lasers; surface emitting lasers; fabrication complexity; high contrast grating VCSEL; laser structure; polarization stability; proton-implant-defined aperture; wavelength 1550 nm; Apertures; Epitaxial growth; Gratings; Implants; Mirrors; Protons; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location
Kyoto
ISSN
0899-9406
Print_ISBN
978-1-4244-5683-3
Type
conf
DOI
10.1109/ISLC.2010.5642775
Filename
5642775
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