Title :
Investigation of electron acceptor states in poly(3-methylthiophene)
Author :
Taylor, D.M. ; Gomes, H.L.
Author_Institution :
Sch. of Electron. Eng., Univ. Coll. of North Wales, Bangor, UK
Abstract :
Both the DC and AC admittance of Schottky barrier diodes formed at the interface of aluminium and poly(3-methylthiophene) have been investigated in some detail. The capacitance-voltage plots for the devices suggest the presence of two acceptor states, one shallow and one deep. The total concentration of acceptor states, 1024-1026 m-3 depending on the degree of undoping, agrees well with estimates from the reverse I-V characteristics assuming image force lowering of the interfacial potential barrier
Keywords :
Schottky diodes; conducting polymers; impurity states; AC admittance; Al; DC admittance; Schottky barrier diodes; capacitance-voltage characteristics; electron acceptor states; image force; interfacial potential barrier; poly(3-methylthiophene); reverse I-V characteristics; undoping; Admittance measurement; Capacitance-voltage characteristics; Electrons; Equations; MISFETs; Microscopy; Oxidation; Polymers; Schottky diodes; Solvents;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1995. Annual Report., Conference on
Conference_Location :
Virginia Beach, VA
Print_ISBN :
0-7803-2931-7
DOI :
10.1109/CEIDP.1995.483807
