• DocumentCode
    3195756
  • Title

    CW current injection of GaN-based vertical cavity surface emitting laser with hybrid mirrors at room temperature

  • Author

    Lu, Tien-Chang ; Chen, Shih-Wei ; Wu, Tzeng-Tsong ; Chen, Chien-Kang ; Chen, Cheng-Hung ; Tu, Po-Min ; Li, Zhen-Yu ; Kuo, Hao-C Hung ; Wang, Shing-Chung

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    26-30 Sept. 2010
  • Firstpage
    5
  • Lastpage
    6
  • Abstract
    We successfully fabricated and measured the GaN vertical cavity surface emitting lasers with hybrid mirrors at room temperature by CW current injection. The lasing wavelength was located at 412nm with a linewidth of 0.5 nm. The threshold current was at 9mA.
  • Keywords
    III-V semiconductors; gallium compounds; laser cavity resonators; laser mirrors; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; CW current injection; GaN; hybrid mirrors; lasing wavelength; temperature 293 K to 298 K; threshold current; vertical cavity surface emitting laser; wavelength 412 nm; Distributed Bragg reflectors; Gallium nitride; Measurement by laser beam; Temperature measurement; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
  • Conference_Location
    Kyoto
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4244-5683-3
  • Type

    conf

  • DOI
    10.1109/ISLC.2010.5642779
  • Filename
    5642779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3195756