Title :
CW current injection of GaN-based vertical cavity surface emitting laser with hybrid mirrors at room temperature
Author :
Lu, Tien-Chang ; Chen, Shih-Wei ; Wu, Tzeng-Tsong ; Chen, Chien-Kang ; Chen, Cheng-Hung ; Tu, Po-Min ; Li, Zhen-Yu ; Kuo, Hao-C Hung ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We successfully fabricated and measured the GaN vertical cavity surface emitting lasers with hybrid mirrors at room temperature by CW current injection. The lasing wavelength was located at 412nm with a linewidth of 0.5 nm. The threshold current was at 9mA.
Keywords :
III-V semiconductors; gallium compounds; laser cavity resonators; laser mirrors; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; CW current injection; GaN; hybrid mirrors; lasing wavelength; temperature 293 K to 298 K; threshold current; vertical cavity surface emitting laser; wavelength 412 nm; Distributed Bragg reflectors; Gallium nitride; Measurement by laser beam; Temperature measurement; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-5683-3
DOI :
10.1109/ISLC.2010.5642779
