Title :
A W-band monolithic 175-mW power amplifier
Author :
Wang, Huifang ; Hwang, Yuh-Shyan ; Chen, T.H. ; Biedenbender, M. ; Streit, D.C. ; Lo, D.C.W. ; Dow, G.S. ; Allen, B.R.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
A monolithic W-band power amplifier has been developed to promote the output power performance, This monolithic two-stage balanced power amplifier has demonstrated a small signal gain of 7 dB and an output power of 175 mW at 90 GHz, which represents state-of-the-art output power performance for a monolithic amplifier at this frequency. This monolithic chip is fabricated using 0.1-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic power HEMT MMIC production process.<>
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; millimetre wave amplifiers; power amplifiers; power integrated circuits; 0.1 micron; 175 mW; 7 dB; 90 GHz; AlGaAs-InGaAs-GaAs; EHF; W-band; monolithic power amplifier; power HEMT MMIC production process; pseudomorphic power HEMT; two-stage balanced amplifier; Frequency; Gain; Gallium arsenide; HEMTs; Laboratories; MMICs; Power amplifiers; Power generation; Production; Space technology;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.405956
