Title :
Forward and reverse recovery behaviour of diodes in power converter applications
Author :
Shammas, Noel ; Chamund, Dinesh ; Taylor, Paul
Author_Institution :
Fac. of Comput., Eng. & Technol., Staffordshire Univ., Stafford, UK
Abstract :
In this paper we report the characteristics, design considerations and the interaction of fast recovery diodes with the main power semiconductor switch such as thyristors, GTOs, and IGBTs for high power conversion applications. We briefly explain the switching phenomena in diodes and how these are characterised and optimised by using different structures for specific applications in conjunction with main switching devices.
Keywords :
power semiconductor diodes; power semiconductor switches; semiconductor device models; semiconductor device reliability; thyristors; GTOs; IGBTs; diodes; forward behaviour; high power conversion applications; main power semiconductor switch; power converter applications; reverse recovery behaviour; thyristors; Conductivity; Insulated gate bipolar transistors; Inverters; Power conversion; Semiconductor diodes; Snubbers; Switches; Switching circuits; Thyristors; Voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314548
